The Role of the Charge State of Surface Atoms of a Metal Substrate in Doping of Quasi-Free-Standing Graphene
- 作者: Davydov S.Y.1, Lebedev A.A.1,2, Lubimova Y.V.3
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隶属关系:
- Ioffe Physical Technical Institute
- St. Petersburg Electrotechnical University (LETI)
- ITMO University
- 期: 卷 44, 编号 12 (2018)
- 页面: 1089-1091
- 栏目: Article
- URL: https://bakhtiniada.ru/1063-7850/article/view/208070
- DOI: https://doi.org/10.1134/S1063785018120222
- ID: 208070
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详细
To determine the effect of a metal substrate on the electronic state of quasi-free-standing graphene, a simple model taking into account the presence of the double electric layer on the metal surface is proposed. The arising electrostatic field shifts the Dirac point of graphene, which leads to its doping. An analytical expression for the charge of graphene atoms is obtained. Numerical estimations are made for (111) faces of Cu, Ag, Au, and Pt. The agreement of the obtained estimations with the available results of numerical calculations is discussed.
作者简介
S. Davydov
Ioffe Physical Technical Institute
编辑信件的主要联系方式.
Email: Sergei_Davydov@mail.ru
俄罗斯联邦, St. Petersburg, 194021
A. Lebedev
Ioffe Physical Technical Institute; St. Petersburg Electrotechnical University (LETI)
Email: Sergei_Davydov@mail.ru
俄罗斯联邦, St. Petersburg, 194021; St. Petersburg, 197022
Yu. Lubimova
ITMO University
Email: Sergei_Davydov@mail.ru
俄罗斯联邦, St. Petersburg, 197101
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