The Mechanism of Generation of Singlet Oxygen in the Presence of Excited Nanoporous Silicon
- 作者: Samosvat D.M.1, Chikalova-Luzina O.P.1, Khromov V.S.1, Zegrya A.G.1, Zegrya G.G.1
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隶属关系:
- Ioffe Physical Technical Institute
- 期: 卷 44, 编号 6 (2018)
- 页面: 479-482
- 栏目: Article
- URL: https://bakhtiniada.ru/1063-7850/article/view/207693
- DOI: https://doi.org/10.1134/S1063785018060093
- ID: 207693
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详细
A theoretical analysis of the mechanism of generation of singlet oxygen in the presence of photoexcited nanoporous silicon is presented. It is demonstrated that the mechanism of generation of singlet oxygen is based on nonradiative energy transfer from nanoporous silicon to an oxygen molecule by the exchange mechanism. An analytical expression of the probability of energy transfer from nanoporous silicon to an oxygen molecule is obtained, and a numerical estimate of this process is given. The numerical estimation is of the order of 103–104 s–1, a value that agrees rather well with the experiment.
作者简介
D. Samosvat
Ioffe Physical Technical Institute
编辑信件的主要联系方式.
Email: samosvat@yandex.ru
俄罗斯联邦, St. Petersburg, 194021
O. Chikalova-Luzina
Ioffe Physical Technical Institute
Email: samosvat@yandex.ru
俄罗斯联邦, St. Petersburg, 194021
V. Khromov
Ioffe Physical Technical Institute
Email: samosvat@yandex.ru
俄罗斯联邦, St. Petersburg, 194021
A. Zegrya
Ioffe Physical Technical Institute
Email: samosvat@yandex.ru
俄罗斯联邦, St. Petersburg, 194021
G. Zegrya
Ioffe Physical Technical Institute
Email: samosvat@yandex.ru
俄罗斯联邦, St. Petersburg, 194021
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