Local Anodic Oxidation of Graphene Layers on SiC


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A method of local anodic oxidation has been used to obtain graphene-oxide regions on SiC. The change of the surface properties was confirmed by atomic-force microscopy and Raman spectroscopy. Experimental data were obtained on the conductivity, potential, and topography of the oxidized regions. It was shown that the oxidation leads to a rise in the surface potential. A relationship was found between oxidation parameters, such as the scanning velocity and the probe voltage. The method of local anodic oxidation was used to obtain by lithography an ~20-nm-wide nanoribbon and an ~10-nm-wide nanoconstriction.

作者简介

P. Alekseev

Ioffe Physical Technical Institute

编辑信件的主要联系方式.
Email: npoxep@gmail.com
俄罗斯联邦, St. Petersburg, 194021

B. Borodin

Ioffe Physical Technical Institute

Email: npoxep@gmail.com
俄罗斯联邦, St. Petersburg, 194021

M. Dunaevskii

Ioffe Physical Technical Institute

Email: npoxep@gmail.com
俄罗斯联邦, St. Petersburg, 194021

A. Smirnov

St. Petersburg National Research University of Information Technologies

Email: npoxep@gmail.com
俄罗斯联邦, St. Petersburg, 197101

V. Davydov

Ioffe Physical Technical Institute

Email: npoxep@gmail.com
俄罗斯联邦, St. Petersburg, 194021

S. Lebedev

Ioffe Physical Technical Institute

Email: npoxep@gmail.com
俄罗斯联邦, St. Petersburg, 194021

A. Lebedev

Ioffe Physical Technical Institute

Email: npoxep@gmail.com
俄罗斯联邦, St. Petersburg, 194021

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