Graphene synthesis by cold implantation of carbon recoil atoms


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A new method of introducing carbon into catalytic metal films for graphene synthesis is proposed. The method is based on the phenomenon of carbon recoil atoms from a layer of methane molecules that are adsorbed on a metal film being incorporated into this film under the action of bombardment with inert gas ions. To increase the thickness of adsorbed methane layer, the substrate is cooled down to −190°C. The proposed method has been implemented on a polycrystalline nickel film. After the final annealing, Raman spectroscopy showed the presence of numerous fragments of multilayer graphene on the film surface.

作者简介

V. Saraykin

Lukin Scientific Research Institute of Physical Problems

Email: zinenko@iptm.ru
俄罗斯联邦, Zelenograd, Moscow, 124460

Yu. Agafonov

Institute of Microelectronics Technology and High-Purity Materials

Email: zinenko@iptm.ru
俄罗斯联邦, Chernogolovka, Moscow oblast, 142432

V. Zinenko

Institute of Microelectronics Technology and High-Purity Materials

编辑信件的主要联系方式.
Email: zinenko@iptm.ru
俄罗斯联邦, Chernogolovka, Moscow oblast, 142432

O. Kononenko

Institute of Microelectronics Technology and High-Purity Materials

Email: zinenko@iptm.ru
俄罗斯联邦, Chernogolovka, Moscow oblast, 142432

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