Email this article An Unusual Mechanism of Misfit Stress Relaxation in Thin Nanofilms
- Authors: Trukhanov E.M.1, Teys S.A.1
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Affiliations:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- Issue: Vol 45, No 11 (2019)
- Pages: 1144-1147
- Section: Article
- URL: https://bakhtiniada.ru/1063-7850/article/view/208486
- DOI: https://doi.org/10.1134/S1063785019110282
- ID: 208486
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Abstract
A new mechanism of misfit stress relaxation in nanofilms with variable density of surface phases is established. This phenomenon is ensured by ordered mass transfer of atoms from the strained atomic layer. The 7 × 7 → 5 × 5 phase transition in a Ge film on Si(111) substrate involves partial compensation of compressive stresses in the interface between volume (bulk) crystal and superstructure by means of tensile straining of loose layers of the surface phase.
About the authors
E. M. Trukhanov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Author for correspondence.
Email: trukh@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
S. A. Teys
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: trukh@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
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