The Influence of the Annealing Regime on the Properties of Terahertz Antennas Based on Low-Temperature-Grown Gallium Arsenide
- Авторы: Nomoev S.A.1, Vasil’evskii I.S.1, Vinichenko A.N.1, Kozlovskii K.I.1, Chistyakov A.A.1, Mishina E.D.2, Khusyainov D.I.2, Buryakov A.M.2
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Учреждения:
- National Research Nuclear University Moscow Engineering Physics Institute
- Moscow Technological University Moscow Institute of Radio Electronics and Automation
- Выпуск: Том 44, № 1 (2018)
- Страницы: 44-46
- Раздел: Regular Papers
- URL: https://bakhtiniada.ru/1063-7850/article/view/207110
- DOI: https://doi.org/10.1134/S1063785018010169
- ID: 207110
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Аннотация
Low-temperature gallium arsenide (LT-GaAs) films were grown by the method of molecularbeam epitaxy (MBE) at a reduced temperature (230°C) on GaAs(100) substrates and subjected to postgrowth annealing in various regimes. Photoconductive antennas (PCAs) with flag geometry formed on the film surface were characterized by terahertz (THz) response power at various bias voltages. The method of THz spectroscopy was used to study the characteristics of PCAs based on LT-GaAs films annealed in various regimes and the optimum interval of postgrowth annealing temperatures (670–720°C) was established.
Об авторах
S. Nomoev
National Research Nuclear University Moscow Engineering Physics Institute
Email: bello16@mail.ru
Россия, Moscow, 115409
I. Vasil’evskii
National Research Nuclear University Moscow Engineering Physics Institute
Email: bello16@mail.ru
Россия, Moscow, 115409
A. Vinichenko
National Research Nuclear University Moscow Engineering Physics Institute
Email: bello16@mail.ru
Россия, Moscow, 115409
K. Kozlovskii
National Research Nuclear University Moscow Engineering Physics Institute
Email: bello16@mail.ru
Россия, Moscow, 115409
A. Chistyakov
National Research Nuclear University Moscow Engineering Physics Institute
Email: bello16@mail.ru
Россия, Moscow, 115409
E. Mishina
Moscow Technological University Moscow Institute of Radio Electronics and Automation
Email: bello16@mail.ru
Россия, Moscow, 119454
D. Khusyainov
Moscow Technological University Moscow Institute of Radio Electronics and Automation
Email: bello16@mail.ru
Россия, Moscow, 119454
A. Buryakov
Moscow Technological University Moscow Institute of Radio Electronics and Automation
Автор, ответственный за переписку.
Email: bello16@mail.ru
Россия, Moscow, 119454
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