Email this article Intraband Radiation Absorption by Free Holes in GaAs/InGaAs Quantum Wells with Allowance for Nonsphericity of the kP Hamiltonian
- Authors: Pavlov N.V.1, Zegrya G.G.1
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Affiliations:
- Ioffe Physical Technical Institute, Russian Academy of Sciences
- Issue: Vol 45, No 5 (2019)
- Pages: 481-484
- Section: Article
- URL: https://bakhtiniada.ru/1063-7850/article/view/208311
- DOI: https://doi.org/10.1134/S1063785019050274
- ID: 208311
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Abstract
A system of Kane’s equations has been derived and solved with allowance for elastic stresses and nonsphericity of the kP Hamiltonian. On this basis, analytic expressions for the energy spectra of charge carriers have been obtained and calculations of the optical absorption coefficient for heavy holes with transition to a spin-orbit-split hole band in GaAs/InGaAs quantum wells (QWs) have been performed for various polarization directions of the incident radiation. It is established that the maximum absorption in GaAs/InGaAs heterostructure takes place at a QW width of 4–6 nm.
About the authors
N. V. Pavlov
Ioffe Physical Technical Institute, Russian Academy of Sciences
Author for correspondence.
Email: pavlovnv@mail.ru
Russian Federation, St. Petersburg, 194021
G. G. Zegrya
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: pavlovnv@mail.ru
Russian Federation, St. Petersburg, 194021
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