Solid-Phase Epitaxy of BiFeO3 Films with Magnetoelectric Properties on Sapphire
- Autores: Muslimov A.E.1, Butashin A.V.1, Kanevskii V.M.1
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Afiliações:
- Shubnikov Institute of Crystallography, Federal Scientific Research Center “Crystallography and Photonics,” Russian Academy of Sciences
- Edição: Volume 45, Nº 2 (2019)
- Páginas: 96-99
- Seção: Article
- URL: https://bakhtiniada.ru/1063-7850/article/view/208203
- DOI: https://doi.org/10.1134/S1063785019020135
- ID: 208203
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Resumo
The ferroelectric domain structure has been investigated in bismuth-ferrite rhombohedral phase films prepared on the rhombohedral plane of sapphire by solid-phase epitaxy. The piezoelectric modulus has been estimated to be d33 ~ 2 pm/V. In films of the Bi25FeO39–BiFeO3 and Bi2Fe4O9–BiFeO3 systems on sapphire, the magnetoelectric-switching effect has been observed in bismuth ferrite crystallites without deposition of exchange-coupled layers. The values of the magnetic moment in bismuth ferrite microcrystallites have been estimated.
Sobre autores
A. Muslimov
Shubnikov Institute of Crystallography, Federal Scientific Research Center “Crystallography and Photonics,”Russian Academy of Sciences
Autor responsável pela correspondência
Email: amuslimov@mail.ru
Rússia, Moscow, 119333
A. Butashin
Shubnikov Institute of Crystallography, Federal Scientific Research Center “Crystallography and Photonics,”Russian Academy of Sciences
Email: amuslimov@mail.ru
Rússia, Moscow, 119333
V. Kanevskii
Shubnikov Institute of Crystallography, Federal Scientific Research Center “Crystallography and Photonics,”Russian Academy of Sciences
Email: amuslimov@mail.ru
Rússia, Moscow, 119333
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