A Study of Ohmic Contacts of Power Photovoltaic Converters
- Autores: Malevskaya A.V.1, Khvostikov V.P.1, Soldatenkov F.Y.1, Khvostikova O.A.1, Vlasov A.S.1, Andreev V.M.1
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Afiliações:
- Ioffe Institute
- Edição: Volume 44, Nº 12 (2018)
- Páginas: 1198-1200
- Seção: Article
- URL: https://bakhtiniada.ru/1063-7850/article/view/208163
- DOI: https://doi.org/10.1134/S1063785019010140
- ID: 208163
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Resumo
Ohmic contacts of power AlGaAs/GaAs-based photovoltaic converters were studied, and a technique for their fabrication was developed. Effect of the doping level of the contact layer on the free-carrier density and the contact resistivity was examined. A technique for fabrication of 2- to 4-μm-thick ohmic contacts with electrochemical deposition of gold layers was studied. The effect of deposition modes on the surface morphology of ohmic contacts and their solidity and conductivity was revealed.
Sobre autores
A. Malevskaya
Ioffe Institute
Autor responsável pela correspondência
Email: amalevskaya@mail.ioffe.ru
Rússia, St. Petersburg, 194021
V. Khvostikov
Ioffe Institute
Email: amalevskaya@mail.ioffe.ru
Rússia, St. Petersburg, 194021
F. Soldatenkov
Ioffe Institute
Email: amalevskaya@mail.ioffe.ru
Rússia, St. Petersburg, 194021
O. Khvostikova
Ioffe Institute
Email: amalevskaya@mail.ioffe.ru
Rússia, St. Petersburg, 194021
A. Vlasov
Ioffe Institute
Email: amalevskaya@mail.ioffe.ru
Rússia, St. Petersburg, 194021
V. Andreev
Ioffe Institute
Email: amalevskaya@mail.ioffe.ru
Rússia, St. Petersburg, 194021
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