A Study of Ohmic Contacts of Power Photovoltaic Converters


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Ohmic contacts of power AlGaAs/GaAs-based photovoltaic converters were studied, and a technique for their fabrication was developed. Effect of the doping level of the contact layer on the free-carrier density and the contact resistivity was examined. A technique for fabrication of 2- to 4-μm-thick ohmic contacts with electrochemical deposition of gold layers was studied. The effect of deposition modes on the surface morphology of ohmic contacts and their solidity and conductivity was revealed.

Sobre autores

A. Malevskaya

Ioffe Institute

Autor responsável pela correspondência
Email: amalevskaya@mail.ioffe.ru
Rússia, St. Petersburg, 194021

V. Khvostikov

Ioffe Institute

Email: amalevskaya@mail.ioffe.ru
Rússia, St. Petersburg, 194021

F. Soldatenkov

Ioffe Institute

Email: amalevskaya@mail.ioffe.ru
Rússia, St. Petersburg, 194021

O. Khvostikova

Ioffe Institute

Email: amalevskaya@mail.ioffe.ru
Rússia, St. Petersburg, 194021

A. Vlasov

Ioffe Institute

Email: amalevskaya@mail.ioffe.ru
Rússia, St. Petersburg, 194021

V. Andreev

Ioffe Institute

Email: amalevskaya@mail.ioffe.ru
Rússia, St. Petersburg, 194021

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