Radiation enhancement in doped AlGaN-structures upon optical pumping


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Resumo

Spectral characteristics of spontaneous and stimulated luminescence have been studied for molecular beam epitaxy synthesized AlxGa1–xN/AlN solid solutions with x = 0.5 and 0.74 upon optical pumping by pulse laser radiation with λ = 266 nm. Broadband radiation spectra with a width of ~260 THz for Al0.5Ga0.5N and ~360 THz for Al0.74Ga0.26N have been obtained. The measured enhancement factors are g ≈ 70 cm–1 for Al0.5Ga0.5N at λ ≈ 528 nm and g ≈ 20 cm–1 for Al0.74Ga0.26N at λ ≈ 468 nm.

Sobre autores

P. Bokhan

Rzhanov Institute of Semiconductor Physics, Siberian Branch

Email: zakrdm@isp.nsc.ru
Rússia, Novosibirsk, 630090

K. Zhuravlev

Novosibirsk State University

Email: zakrdm@isp.nsc.ru
Rússia, Novosibirsk, 630090

D. Zakrevsky

Rzhanov Institute of Semiconductor Physics, Siberian Branch

Autor responsável pela correspondência
Email: zakrdm@isp.nsc.ru
Rússia, Novosibirsk, 630090

T. Malin

Rzhanov Institute of Semiconductor Physics, Siberian Branch

Email: zakrdm@isp.nsc.ru
Rússia, Novosibirsk, 630090

I. Osinnykh

Rzhanov Institute of Semiconductor Physics, Siberian Branch

Email: zakrdm@isp.nsc.ru
Rússia, Novosibirsk, 630090

N. Fateev

Rzhanov Institute of Semiconductor Physics, Siberian Branch

Email: zakrdm@isp.nsc.ru
Rússia, Novosibirsk, 630090

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