Мақаланы E-mail арқылы жіберу InAlAs/InGaAs/InP High-Electron-Mobility Transistors with a Composite Channel and Higher Breakdown Characteristics
- Авторлар: Maleev N.A.1,2, Vasil’ev A.P.3, Kuzmenkov A.G.3, Bobrov M.A.1, Kulagina M.M.1, Troshkov S.I.1, Maleev S.N.1, Belyakov V.A.4, Petryakova E.V.4, Kudryashova Y.P.4, Fefelova E.L.4, Makartsev I.V.4, Blokhin S.A.1, Ahmedov F.A.5, Egorov A.V.5, Fefelov A.G.4, Ustinov V.M.1,2,3
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Мекемелер:
- Ioffe Institute, Russian Academy of Sciences
- St. Petersburg State Electrotechnical University LETI
- Submicron Heterostructures for Microelectronics Research Engineering Center, Russian Academy of Sciences
- JSC “NPP Salyut”
- NPO TECHNOMASH
- Шығарылым: Том 45, № 11 (2019)
- Беттер: 1092-1096
- Бөлім: Article
- URL: https://bakhtiniada.ru/1063-7850/article/view/208473
- DOI: https://doi.org/10.1134/S1063785019110075
- ID: 208473
Дәйексөз келтіру
Ашық рұқсат
Рұқсат берілді
Тек жазылушылар үшін
Аннотация
A high-electron-mobility transistor (HEMT) based on InAlAs/InGaAs/InP heterostructures possessing higher breakdown characteristics is developed. An InGaAs composite channel structure, combined with completely selective forming of the double recess structure, is used in the devices. HEMTs with a T‑shaped gate 120 nm in length consist of four fingers, each 30 μm in width, exhibit a maximum transconductance of 810 mS/mm, 460-mA/mm maximum density of drain current and 8- to 10-V drain-to-gate breackdown voltage. The current-amplification cut-off frequency of transistors is over 115 GHz. Due to the enhanced breakdown voltage and the forming of a double recess structure by selective etching, the elaborated transistors are promising for application in the monolithic integrated circuits of the millimeter-wave medium power amplifiers.
Негізгі сөздер
Авторлар туралы
N. Maleev
Ioffe Institute, Russian Academy of Sciences; St. Petersburg State Electrotechnical University LETI
Хат алмасуға жауапты Автор.
Email: maleev@beam.ioffe.ru
Ресей, St. Petersburg, 194021; St. Petersburg, 197022
A. Vasil’ev
Submicron Heterostructures for Microelectronics Research Engineering Center, Russian Academy of Sciences
Email: maleev@beam.ioffe.ru
Ресей, St. Petersburg, 194021
A. Kuzmenkov
Submicron Heterostructures for Microelectronics Research Engineering Center, Russian Academy of Sciences
Email: maleev@beam.ioffe.ru
Ресей, St. Petersburg, 194021
M. Bobrov
Ioffe Institute, Russian Academy of Sciences
Email: maleev@beam.ioffe.ru
Ресей, St. Petersburg, 194021
M. Kulagina
Ioffe Institute, Russian Academy of Sciences
Email: maleev@beam.ioffe.ru
Ресей, St. Petersburg, 194021
S. Troshkov
Ioffe Institute, Russian Academy of Sciences
Email: maleev@beam.ioffe.ru
Ресей, St. Petersburg, 194021
S. Maleev
Ioffe Institute, Russian Academy of Sciences
Email: maleev@beam.ioffe.ru
Ресей, St. Petersburg, 194021
V. Belyakov
JSC “NPP Salyut”
Email: maleev@beam.ioffe.ru
Ресей, Nizhny Novgorod, 603107
E. Petryakova
JSC “NPP Salyut”
Email: maleev@beam.ioffe.ru
Ресей, Nizhny Novgorod, 603107
Yu. Kudryashova
JSC “NPP Salyut”
Email: maleev@beam.ioffe.ru
Ресей, Nizhny Novgorod, 603107
E. Fefelova
JSC “NPP Salyut”
Email: maleev@beam.ioffe.ru
Ресей, Nizhny Novgorod, 603107
I. Makartsev
JSC “NPP Salyut”
Email: maleev@beam.ioffe.ru
Ресей, Nizhny Novgorod, 603107
S. Blokhin
Ioffe Institute, Russian Academy of Sciences
Email: maleev@beam.ioffe.ru
Ресей, St. Petersburg, 194021
F. Ahmedov
NPO TECHNOMASH
Email: maleev@beam.ioffe.ru
Ресей, Moscow, 127018
A. Egorov
NPO TECHNOMASH
Email: maleev@beam.ioffe.ru
Ресей, Moscow, 127018
A. Fefelov
JSC “NPP Salyut”
Email: maleev@beam.ioffe.ru
Ресей, Nizhny Novgorod, 603107
V. Ustinov
Ioffe Institute, Russian Academy of Sciences; St. Petersburg State Electrotechnical University LETI; Submicron Heterostructures for Microelectronics Research Engineering Center, Russian Academy of Sciences
Email: maleev@beam.ioffe.ru
Ресей, St. Petersburg, 194021; St. Petersburg, 197022; St. Petersburg, 194021
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