The Effect of Base Thickness on Photoconversion Efficiency in Textured Silicon-Based Solar Cells

A. V. Sachenko; V. P. Kostylyov; A. V. Bobyl; V. N. Vlasyuk; I. O. Sokolovskyi; G. A. Konoplev; E. I. Terukov; M. Z. Shvarts; M. Evstigneev

doi:10.1134/S1063785018100139

The Effect of Base Thickness on Photoconversion Efficiency in Textured Silicon-Based Solar Cells

Авторлар: Sachenko A.V.¹, Kostylyov V.P.¹, Bobyl A.V.², Vlasyuk V.N.¹, Sokolovskyi I.O.¹, Konoplev G.A.³, Terukov E.I.²^,3, Shvarts M.Z.², Evstigneev M.⁴
Мекемелер:
1. V. Lashkaryov Institute of Semiconductor Physics
2. Ioffe Physical Technical Institute
3. St. Petersburg State Electrotechnical University “LETI”
4. Department of Physics and Physical Oceanography
Шығарылым: Том 44, № 10 (2018)
Беттер: 873-876
Бөлім: Article
URL: https://bakhtiniada.ru/1063-7850/article/view/207963
DOI: https://doi.org/10.1134/S1063785018100139
ID: 207963

Дәйексөз келтіру

Толық мәтін

Ашық рұқсат
Рұқсат жабық

Рұқсат берілді
Рұқсат жабық

Тек жазылушылар үшін

Аннотация
Авторлар туралы
Әдебиет тізімі
Қосымша файлдар
Статистика

Аннотация

A theory is developed, which describes the experimental external quantum efficiency, EQE(λ) as a function of photon wavelength for structured Si-based solar cells. Short-circuit current density as a function of base thickness, d, is calculated for the high-efficiency solar cells with the photoconversion efficiency η ≥ 25% The procedure allows one to carry out a complete optimization of such solar cells, in particular, to find the optimal base thickness, d_opt.