New Cluster Secondary Ions for Quantitative Analysis of the Concentration of Boron Atoms in Diamond by Time-of-Flight Secondary-Ion Mass Spectrometry


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Аннотация

A new approach to quantitative analysis of the concentration of boron atoms in diamond using secondary- ion mass spectrometers with time-of-flight mass analyzers is proposed. Along with the known boron-containing lines (B, BC, BC2), many lines related to cluster secondary ions BCN have been found in the mass spectrum; their intensity increases by one or two orders of magnitude when Bi3 probe ions are used. Lines BC4, BC6, BC2, and BC8 have the highest intensity (in the descending order); when they are summed, the sensitivity increases by an order of magnitude in comparison with the known mode of detecting BC2. The parameters of the boron δ-layer in single-crystal diamond films grown under optimal conditions have been measured to be unprecedented: the δ-layer width is about 2 nm, and the concentration is 6.4 × 1020 cm–3 (the boron concentrations for doped and undoped diamonds differ by four orders of magnitude).

Авторлар туралы

M. Drozdov

Institute for Physics of Microstructures

Хат алмасуға жауапты Автор.
Email: drm@ipm.sci-nnov.ru
Ресей, Nizhny Novgorod, 603087

Yu. Drozdov

Institute for Physics of Microstructures

Email: drm@ipm.sci-nnov.ru
Ресей, Nizhny Novgorod, 603087

M. Lobaev

Institute of Applied Physics

Email: drm@ipm.sci-nnov.ru
Ресей, Nizhny Novgorod, 603950

P. Yunin

Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod

Email: drm@ipm.sci-nnov.ru
Ресей, Nizhny Novgorod, 603087; Nizhny Novgorod, 603950

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