Optical Properties of InGaAs/InAlAs Metamorphic Nanoheterostructures for Photovoltaic Converters of Laser and Solar Radiation

Abstract

Reflectance spectroscopy has been used to determine the refractive indices of nanoscale In_xAl_yGa_1–x–yAs and In_xAl_1–xAs layers with indium and aluminum concentrations x = 0.21–0.24 and y = 0, 0.1, and 0.2 on specially created Bragg-reflector heterostructures at wavelengths in the range 700–2000 nm. It was demonstrated that the method based on an analysis of the auto- and cross-correlation coefficients of the wavelength derivatives of the dependence of the reflectance of structures of this kind in order to determine the dispersion curves of the materials forming a reflector. It was found that raising the concentration of indium in InGaAs and AlInAs leads to a substantial rise in the refractive index, with a preserved spectral run of the refractive indices, which is characteristic of gallium arsenide and aluminum arsenide.