Semipolar GaN Layers Grown on Nanostructured Si(100) Substrate

V. N. Bessolov; E. V. Konenkova; T. A. Orlova; S. N. Rodin; M. P. Shcheglov; D. S. Kibalov; V. K. Smirnov

doi:10.1134/S1063785018060172

Semipolar GaN Layers Grown on Nanostructured Si(100) Substrate

Authors: Bessolov V.N.¹, Konenkova E.V.¹, Orlova T.A.¹, Rodin S.N.¹, Shcheglov M.P.¹, Kibalov D.S.², Smirnov V.K.²
Affiliations:
1. Ioffe Physical Technical Institute
2. Quantum Silicon Company
Issue: Vol 44, No 6 (2018)
Pages: 525-527
Section: Article
URL: https://bakhtiniada.ru/1063-7850/article/view/207729
DOI: https://doi.org/10.1134/S1063785018060172
ID: 207729

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Abstract

We propose a new method for growing semipolar GaN films on a Si(100) substrate with an array of sub-100-nm-sized V-grooves formed on the surface. It is shown that, using such a nanostructured substrate for metalorganic hydride vapor-phase epitaxy, it is possible to obtain GaN (101̅1̇) epilayers deviating by an angle of about 62° from the polar direction and having an X-ray rocking curve with a minimum FWHM value of ω_θ ~ 60 arcmin.