Investigation of the Static and Dynamic Characteristics for a Wafer-Fused C-band VCSEL in the Mode of the Optical-Electric Converter
- Authors: Belkin M.E.1
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Affiliations:
- Moscow Technological University (MIREA)
- Issue: Vol 44, No 1 (2018)
- Pages: 32-35
- Section: Near-IR Vertical-Cavity Surface-Emitting Lasers (Special Issue)
- URL: https://bakhtiniada.ru/1063-7850/article/view/207093
- DOI: https://doi.org/10.1134/S1063785018010030
- ID: 207093
Cite item
Abstract
The results of an experimental study for a long wavelength vertical cavity surface-emitting laser of a wafer-fused construction as an effective resonant cavity enhanced photodetector of analog optical signals are described. The device is of interest for a number of promising microwave photonics applications and for creation of a low-cost photoreceiver in a high-speed fiber optics telecommunication system with dense wavelength division multiplexing. The schematic of the testbed, the original technique allowing to calculate the passband of the built-in optical cavity, and the results of measuring dark current, current responsivity, amplitude- and phase-frequency characteristics during the process of photo-detection are demonstrated.
About the authors
M. E. Belkin
Moscow Technological University (MIREA)
Author for correspondence.
Email: belkin@mirea.ru
Russian Federation, Moscow, 119454
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