Мақаланы E-mail арқылы жіберу Extension of the Mott–Gurney Law for a Bilayer Gap
- Авторлар: Dubinov A.E.1,2,3, Kitayev I.N.1,2,3
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Мекемелер:
- Russian Federal Nuclear Center
- National Research Nuclear University MEPhI
- Sarov Physicotechnical Institute
- Шығарылым: Том 63, № 4 (2018)
- Беттер: 467-470
- Бөлім: Theoretical and Mathematical Physics
- URL: https://bakhtiniada.ru/1063-7842/article/view/201076
- DOI: https://doi.org/10.1134/S1063784218040096
- ID: 201076
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Аннотация
Steady drift states of an electron flow in a planar gap filled with a bilayer dielectric have been considered. Exact mathematical formulas have been derived that describe the distributions of the electrostatic potential and space charge limited electron flow current (extended Mott–Gurney law for a bilayer diode).
Авторлар туралы
A. Dubinov
Russian Federal Nuclear Center; National Research Nuclear University MEPhI; Sarov Physicotechnical Institute
Хат алмасуға жауапты Автор.
Email: dubinov-ae@yandex.ru
Ресей, pr. Mira 37, Sarov, Nizhny Novgorod oblast, 607188; Kashirskoe sh. 31, Moscow, 115409; ul. Dukhova 6, Sarov, Nizhny Novgorod oblast, 607186
I. Kitayev
Russian Federal Nuclear Center; National Research Nuclear University MEPhI; Sarov Physicotechnical Institute
Email: dubinov-ae@yandex.ru
Ресей, pr. Mira 37, Sarov, Nizhny Novgorod oblast, 607188; Kashirskoe sh. 31, Moscow, 115409; ul. Dukhova 6, Sarov, Nizhny Novgorod oblast, 607186
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