Anomalous Hall Effect in Frustrated Magnets
- Авторлар: Glushkov V.V.1,2, Anisimov M.A.1,3, Bogach A.V.1,3, Bozhko A.D.1, Demishev S.V.1,2, Krasnorussky V.N.1, Samarin A.N.1,4, Filipov V.B.5, Shitsevalova N.Y.5
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Мекемелер:
- Prokhorov General Physics Institute of the Russian Academy of Sciences
- National Research University Higher School of Economics
- National University of Science and Technology MISiS
- Moscow Institute of Physics and Technology
- Frantsevich Institute for Problems of Materials Science, NASU
- Шығарылым: Том 61, № 9 (2019)
- Беттер: 1622-1626
- Бөлім: Magnetism
- URL: https://bakhtiniada.ru/1063-7834/article/view/206151
- DOI: https://doi.org/10.1134/S1063783419090075
- ID: 206151
Дәйексөз келтіру
Аннотация
Comparative analysis of Hall effect in substitutional solid solutions Ho0.5Lu0.5B12, Mn1 – xFexSi (0 ≤ x ≤ 1) and Eu1 – xGdxB6 (x < 0.04) is carried out at temperatures 2–300 K in magnetic fields up to 8 T. Anomalous contribution to the Hall effect \(\rho _{{xy}}^{{\text{A}}}\) ~ \({{\rho }_{{xx}}}M\) has been identified for systems with various types of magnetic frustration. The linear scaling \(\rho _{{xy}}^{{\text{A}}}\) ~ ρxx is detected in the resistivity range ρxx ~ 0.01–1 mΩ cm lying outside the range of applicability of the classical model of asymmetric scattering. It is associated with the increase in the amplitude of spin fluctuations in the paramagnetic phase of the investigated compounds with noncollinear magnetic structure. The topological contribution to the Hall effect is extracted for Ho0.5Lu0.5B12 and Eu1 – xGdxB6. Its amplitude is found to vary from 80 nΩ cm (Ho0.5Lu0.5B12) to 7.5 μΩ cm (Eu0.97Gd0.03B6).
Негізгі сөздер
Авторлар туралы
V. Glushkov
Prokhorov General Physics Institute of the Russian Academy of Sciences; National Research University Higher School of Economics
Хат алмасуға жауапты Автор.
Email: glushkov@lt.gpi.ru
Ресей, Moscow, 119991; Moscow, 101000
M. Anisimov
Prokhorov General Physics Institute of the Russian Academy of Sciences; National University of Science and Technology MISiS
Email: glushkov@lt.gpi.ru
Ресей, Moscow, 119991; Moscow, 101000
A. Bogach
Prokhorov General Physics Institute of the Russian Academy of Sciences; National University of Science and Technology MISiS
Email: glushkov@lt.gpi.ru
Ресей, Moscow, 119991; Moscow, 101000
A. Bozhko
Prokhorov General Physics Institute of the Russian Academy of Sciences
Email: glushkov@lt.gpi.ru
Ресей, Moscow, 119991
S. Demishev
Prokhorov General Physics Institute of the Russian Academy of Sciences; National Research University Higher School of Economics
Email: glushkov@lt.gpi.ru
Ресей, Moscow, 119991; Moscow, 101000
V. Krasnorussky
Prokhorov General Physics Institute of the Russian Academy of Sciences
Email: glushkov@lt.gpi.ru
Ресей, Moscow, 119991
A. Samarin
Prokhorov General Physics Institute of the Russian Academy of Sciences; Moscow Institute of Physics and Technology
Email: glushkov@lt.gpi.ru
Ресей, Moscow, 119991; Dolgoprudny, Moscow oblast, 141700
V. Filipov
Frantsevich Institute for Problems of Materials Science, NASU
Email: glushkov@lt.gpi.ru
Украина, Kyiv, 03142
N. Shitsevalova
Frantsevich Institute for Problems of Materials Science, NASU
Email: glushkov@lt.gpi.ru
Украина, Kyiv, 03142
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