Measurement of the Charge-Carrier Mobility in Gallium Arsenide Using a Near-Field Microwave Microscope by the Microwave-Magnetoresistance Method

D. A. Usanov; A. E. Postelga; A. A. Kalyamin; I. V. Sharov

doi:10.1134/S1063782618130195

Measurement of the Charge-Carrier Mobility in Gallium Arsenide Using a Near-Field Microwave Microscope by the Microwave-Magnetoresistance Method

作者: Usanov D.A.¹, Postelga A.E.¹, Kalyamin A.A.¹, Sharov I.V.¹
隶属关系:
1. National Research Saratov State University named after N.G. Chernyshevsky
期: 卷 52, 编号 13 (2018)
页面: 1669-1671
栏目: Electronic Properties of Semiconductors
URL: https://bakhtiniada.ru/1063-7826/article/view/204851
DOI: https://doi.org/10.1134/S1063782618130195
ID: 204851

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详细

The possibility of contactless nondestructive local measurements of the microwave carrier mobility in gallium arsenide using a near-field scanning microwave microscope and the effect of microwave magnetoresistance is shown. The need to consider the effect of a shift of the microwave field in processing the result of the measurements is noted.