X-ray conductivity of ZnSe single crystals
- 作者: Degoda V.Y.1, Podust G.P.1
-
隶属关系:
- Physics Department
- 期: 卷 50, 编号 5 (2016)
- 页面: 579-585
- 栏目: Electronic Properties of Semiconductors
- URL: https://bakhtiniada.ru/1063-7826/article/view/197054
- DOI: https://doi.org/10.1134/S1063782616050067
- ID: 197054
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详细
The experimental I–V and current–illuminance characteristics of the X-ray conductivity and X-ray luminescence of zinc-selenide single crystals feature a nonlinear shape. The performed theoretical analysis of the kinetics of the X-ray conductivity shows that even with the presence of shallow and deep traps for free charge carriers in a semiconductor sample, the integral characteristics of the X-ray conductivity (the current–illuminance and I–V dependences) should be linear. It is possible to assume that the nonlinearity experimentally obtained in the I–V and current–illuminance characteristics can be caused by features of the generation of free charge carriers upon X-ray irradiation, i.e., the generation of hundreds of thousands of free charge carriers of opposite sign in a local region with a diameter of <1 μm and Coulomb interaction between the free charge carriers of opposite signs.
作者简介
V. Degoda
Physics Department
编辑信件的主要联系方式.
Email: degoda@univ.kiev.ua
乌克兰, Kyiv, 03680
G. Podust
Physics Department
Email: degoda@univ.kiev.ua
乌克兰, Kyiv, 03680
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