电邮这篇文章 Formation of graphite/sic structures by the thermal decomposition of silicon carbide
- 作者: Mynbaeva M.G.1,2, Lavrent’ev A.A.1, Mynbaev K.D.1,2
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隶属关系:
- Ioffe Physical–Technical Institute
- St. Petersburg National Research University of Information Technologies, Mechanics and Optics
- 期: 卷 50, 编号 1 (2016)
- 页面: 138-142
- 栏目: Physics of Semiconductor DevicesFabrication, Treatment, and Testing of Materials and Structures
- URL: https://bakhtiniada.ru/1063-7826/article/view/196721
- DOI: https://doi.org/10.1134/S1063782616010176
- ID: 196721
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详细
The conditions in which carbon layers are synthesized on the surface of silicon carbide (SiC) wafers by thermal decomposition are studied. The effect of temperature and composition of the gas atmosphere on the structural properties of the layers being synthesized is analyzed. The conditions in which continuous graphite films with both single-crystal and polycrystalline structure can be obtained are determined.
作者简介
M. Mynbaeva
Ioffe Physical–Technical Institute; St. Petersburg National Research University of Information Technologies, Mechanics and Optics
编辑信件的主要联系方式.
Email: mgm@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021; St. Petersburg, 197101
A. Lavrent’ev
Ioffe Physical–Technical Institute
Email: mgm@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
K. Mynbaev
Ioffe Physical–Technical Institute; St. Petersburg National Research University of Information Technologies, Mechanics and Optics
Email: mgm@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021; St. Petersburg, 197101
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