Vertical heterostructures based on graphene and other 2D materials


如何引用文章

全文:

开放存取 开放存取
受限制的访问 ##reader.subscriptionAccessGranted##
受限制的访问 订阅存取

详细

Recent advances in the fabrication of vertical heterostructures based on graphene and other dielectric and semiconductor single-layer materials, including hexagonal boron nitride and transition-metal dichalcogenides, are reviewed. Significant progress in this field is discussed together with the great prospects for the development of vertical heterostructures for various applications, which are associated, first of all, with reconsideration of the physical principles of the design and operation of device structures based on graphene combined with other 2D materials.

作者简介

I. Antonova

Siberian Branch; Novosibirsk State University

Email: info@pleiadesonline.com
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090

补充文件

附件文件
动作
1. JATS XML

版权所有 © Pleiades Publishing, Ltd., 2016