Отправить статью по E-mail Simulation and Experimental Studies of Illumination Effects on the Current Transport of Nitridated GaAs Schottky Diode
- Авторы: Rabehi A.1,2, Bideux L.3, Gruzza B.3, Monier G.3, Hatem-Kacha A.1, Guermoui M.4, Ziane A.1, Akkal B.1, Benamara Z.1, Amrani M.1, Robert-Goumet C.3
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Учреждения:
- Laboratoire de Micro-électronique Appliquèe, Université Djillali Liabès de Sidi Bel Abbés,
- Departement d´électronique, Institut des sciences et des technologies, Centre universitaire de Tissemsilt
- Institut Pascal, Université Clermont Auvergne, CNRS, SIGMA Clermont
- Unité de Recherche Appliquée en Energies Renouvelables, URAER, Centre de Développement des Energies Renouvelables, CDER
- Выпуск: Том 52, № 16 (2018)
- Страницы: 1998-2006
- Раздел: Physics of Semiconductor Devices
- URL: https://bakhtiniada.ru/1063-7826/article/view/205263
- DOI: https://doi.org/10.1134/S106378261816025X
- ID: 205263
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Аннотация
In this paper, we studied the electrical characteristic of Schottky diodes based on gold contact on nitridated GaAs substrates. The used (100) GaAs substrate is n-type with concentration of Nd = 4.9 × 1015 cm–3. Nitridation process was performed using a N2 glow discharge source (GDS) creating N atomic species. A ultra-thin film with a thickness of 2.2 nm GaN is performed on GaAs surface. In order to study the electric characteristics under illumination, we use of a He–Ne laser of 1 mW power and 632.8 nm wavelength. The current–voltage (I–V) of the Au/GaN/GaAs structures was investigated at room temperature. The saturation current IS, the series resistance RS and the mean ideality factor n are, respectively, equal to 4.46 × 10–07 A, 172 Ohm, 1.4 in the dark and to 5.64 × 10–07 A, 148 Ohm, 1.21 under illumination. To analyze these results, a 1D-simulation code of forward and reverse current–voltage characteristics versus the critical parameters of a nitridated GaAs Schottky diode is implemented. The algorithm is based on the solution of the system composed by Poisson’s and continuities equations. In this calculation, we take into account the existence of the GaN layer and the localization of traps states in the perturbed interface. We have considered the W-shaped and U-shaped distribution of traps states in the band gap. The effects of the doping concentration of GaAs, the traps states density, light intensities and the work function of gold \({{\phi }_{m}}\) are investigated. By fitting the experimental curve, we can deduce the values of the traps states and the exact value of the work function of gold, and consequently we validate the developed model.
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Об авторах
A. Rabehi
Laboratoire de Micro-électronique Appliquèe, Université Djillali Liabès de Sidi Bel Abbés,; Departement d´électronique, Institut des sciences et des technologies, Centre universitaire de Tissemsilt
Автор, ответственный за переписку.
Email: rab_ehi@hotmail.fr
Алжир, Sidi Bel Abbés, BP 8922000; Tissemsilt, 38000
L. Bideux
Institut Pascal, Université Clermont Auvergne, CNRS, SIGMA Clermont
Email: rab_ehi@hotmail.fr
Франция, Clermont-Ferrand, F-63000
B. Gruzza
Institut Pascal, Université Clermont Auvergne, CNRS, SIGMA Clermont
Email: rab_ehi@hotmail.fr
Франция, Clermont-Ferrand, F-63000
G. Monier
Institut Pascal, Université Clermont Auvergne, CNRS, SIGMA Clermont
Email: rab_ehi@hotmail.fr
Франция, Clermont-Ferrand, F-63000
A. Hatem-Kacha
Laboratoire de Micro-électronique Appliquèe, Université Djillali Liabès de Sidi Bel Abbés,
Email: rab_ehi@hotmail.fr
Алжир, Sidi Bel Abbés, BP 8922000
M. Guermoui
Unité de Recherche Appliquée en Energies Renouvelables, URAER, Centre de Développement des Energies Renouvelables, CDER
Email: rab_ehi@hotmail.fr
Алжир, Ghardaïa, 47133
A. Ziane
Laboratoire de Micro-électronique Appliquèe, Université Djillali Liabès de Sidi Bel Abbés,
Email: rab_ehi@hotmail.fr
Алжир, Sidi Bel Abbés, BP 8922000
B. Akkal
Laboratoire de Micro-électronique Appliquèe, Université Djillali Liabès de Sidi Bel Abbés,
Email: rab_ehi@hotmail.fr
Алжир, Sidi Bel Abbés, BP 8922000
Z. Benamara
Laboratoire de Micro-électronique Appliquèe, Université Djillali Liabès de Sidi Bel Abbés,
Email: rab_ehi@hotmail.fr
Алжир, Sidi Bel Abbés, BP 8922000
M. Amrani
Laboratoire de Micro-électronique Appliquèe, Université Djillali Liabès de Sidi Bel Abbés,
Email: rab_ehi@hotmail.fr
Алжир, Sidi Bel Abbés, BP 8922000
C. Robert-Goumet
Institut Pascal, Université Clermont Auvergne, CNRS, SIGMA Clermont
Email: rab_ehi@hotmail.fr
Франция, Clermont-Ferrand, F-63000
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