Enviar artigo por via de e-mail Magnetoimpedance Effect in a SOI-Based Structure
- Autores: Smolyakov D.A.1, Tarasov A.S.1, Yakovlev I.A.1,2, Volochaev M.N.1,2
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Afiliações:
- Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences
- Siberian State University of Science and Technology
- Edição: Volume 53, Nº 14 (2019)
- Páginas: 1964-1966
- Seção: Nanostructure Devices
- URL: https://bakhtiniada.ru/1063-7826/article/view/207541
- DOI: https://doi.org/10.1134/S1063782619140215
- ID: 207541
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Resumo
This paper presents the results of the study the transport properties of the SOI-based structure. Measurements were carried out on an alternating current with an external magnetic field in a wide temperature range. The influence of the magnetic field was found. We associate this effect with the influence on the surface states located at the interface, this appears as a change of the energy of their levels. This effect is enhanced by the nanoscale of the silicon channel.
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Sobre autores
D. Smolyakov
Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences
Autor responsável pela correspondência
Email: sda88@iph.krasn.ru
Rússia, Krasnoyarsk, 660036
A. Tarasov
Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences
Autor responsável pela correspondência
Email: taras@iph.krasn.ru
Rússia, Krasnoyarsk, 660036
I. Yakovlev
Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences; Siberian State University of Science and Technology
Autor responsável pela correspondência
Email: yia@iph.krasn.ru
Rússia, Krasnoyarsk, 660036; Krasnoyarsk, 660014
M. Volochaev
Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences; Siberian State University of Science and Technology
Autor responsável pela correspondência
Email: volochaev91@mail.ru
Rússia, Krasnoyarsk, 660036; Krasnoyarsk, 660014
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