Effect of a Second-Order Phase Transition on the Electrical Conductivity of Metal/Semiconductor Structures

Resumo

The properties of the Cr–p-Si potential barrier near the temperature of the antiferromagnetic–paramagnetic phase transition in chromium are investigated. A significant change in the potential barrier and an anomalous increase in the conductivity in the Cr–p-Si–Au structure are observed near the temperature of the second-order antiferromagnetic–paramagnetic phase transition in chromium. It is established that current fluctuations in the structure are enhanced when approaching the phase-transition point. The experimental results are interpreted based on the assumption that the observed change in the electron-transport properties of the Cr–Si interface is due to a shift of the Fermi quasi-level in chromium as a result of the second-order phase transition.