Morphology, optical, and adsorption properties of copper-oxide layers deposited from complex compound solutions


Citar

Texto integral

Acesso aberto Acesso aberto
Acesso é fechado Acesso está concedido
Acesso é fechado Somente assinantes

Resumo

A technique for synthesizing gas-sensing copper-oxide layers by layer-by-layer deposition onto glass and plastic substrates is considered. Deposition is based on the oxidation of a copper–ammonia complex by hydrogen peroxide. Layers synthesized at various numbers of deposition cycles are studied by atomicforce microscopy and transmission spectroscopy methods (300–1000 nm). The spectral shape indicates the mixed nature of the oxide with predominant copper oxide (I) Cu2O with a corresponding band gap of 2.1 eV. The layers have a continuous granular structure. The surface concentration of Brönsted acid adsorption sites with pKa ≈ 2.5 (OH acid groups), determined by the indicator method, is 560 μmol/m2 for the initial films, and threefold increases after heat treatment at 80°C for 30 min. The results obtained are interesting for the use of the described technology for fabricating copper-oxide active layers in gas-sensing sensors operating at room temperature.

Sobre autores

L. Matyushkin

Saint Petersburg Electrotechnical University “LETI”

Autor responsável pela correspondência
Email: leva.matyushkin@gmail.com
Rússia, St. Petersburg, 197376

A. Reshetnikova

Saint Petersburg Electrotechnical University “LETI”

Email: leva.matyushkin@gmail.com
Rússia, St. Petersburg, 197376

A. Andronov

Saint Petersburg Electrotechnical University “LETI”

Email: leva.matyushkin@gmail.com
Rússia, St. Petersburg, 197376

P. Afonicheva

Saint Petersburg Electrotechnical University “LETI”

Email: leva.matyushkin@gmail.com
Rússia, St. Petersburg, 197376

S. Myakin

Saint Petersburg State Technological Institute

Email: leva.matyushkin@gmail.com
Rússia, St. Petersburg, 190013

N. Permiakov

Saint Petersburg Electrotechnical University “LETI”

Email: leva.matyushkin@gmail.com
Rússia, St. Petersburg, 197376

V. Moshnikov

Saint Petersburg Electrotechnical University “LETI”

Email: leva.matyushkin@gmail.com
Rússia, St. Petersburg, 197376

Arquivos suplementares

Arquivos suplementares
Ação
1. JATS XML

Declaração de direitos autorais © Pleiades Publishing, Ltd., 2017