GaInAsP/InP-Based Laser Power Converters (λ = 1064 nm)

Аннотация

Photovoltaic laser-power converters with irradiation of the substrate side are developed based on lattice-matched GaInAs/InP heterostructures formed by metal-organic vapor-phase epitaxy. Variants of antireflection coatings with a reflection minimum at a wavelength of λ = 1064 nm as well as features of chip bonding using soldering pastes with different melting points are considered. The efficiency of 34.5% (1.2 W, λ =1064 nm) is achieved for the converters with the area of 3.5 × 3.5 mm² at uniform radiation conditions.