Мақаланы E-mail арқылы жіберу On the Fabrication of Graphene p–n Junctions and Their Application for Detecting Terahertz Radiation
- Авторлар: Vasileva G.Y.1, Vasilyev Y.B.1, Novikov S.N.2, Danilov S.N.3, Ganichev S.D.3
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Мекемелер:
- Ioffe Institute
- Micro and Nanoscience Laboratory
- Terahertz Center TerZ, University of Regensburg (Institut für Angewandte Physik, Universitüt Regensburg)
- Шығарылым: Том 52, № 8 (2018)
- Беттер: 1077-1081
- Бөлім: Physics of Semiconductor Devices
- URL: https://bakhtiniada.ru/1063-7826/article/view/203928
- DOI: https://doi.org/10.1134/S1063782618080225
- ID: 203928
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Аннотация
A new method for the formation of lateral p–n junctions in epitaxial graphene with the use of UV (ultraviolet) radiation is considered. The UV illumination method makes it possible to obtain large-size p–n junctions. Such p–n junctions are investigated in the photocurrent and photoconductivity modes under irradiation with terahertz radiation. The mechanisms of terahertz photoresponse in graphene p–n junctions are discussed.
Авторлар туралы
G. Vasileva
Ioffe Institute
Email: yu.vasilyev@mail.ioffe.ru
Ресей, St. Petersburg, 194021
Yu. Vasilyev
Ioffe Institute
Хат алмасуға жауапты Автор.
Email: yu.vasilyev@mail.ioffe.ru
Ресей, St. Petersburg, 194021
S. Novikov
Micro and Nanoscience Laboratory
Email: yu.vasilyev@mail.ioffe.ru
Финляндия, Espoo, 02150
S. Danilov
Terahertz Center TerZ, University of Regensburg (Institut für Angewandte Physik, Universitüt Regensburg)
Email: yu.vasilyev@mail.ioffe.ru
Германия, Regensburg, D-380106
S. Ganichev
Terahertz Center TerZ, University of Regensburg (Institut für Angewandte Physik, Universitüt Regensburg)
Email: yu.vasilyev@mail.ioffe.ru
Германия, Regensburg, D-380106
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