Thermal Smoothing and Roughening of GaAs Surfaces: Experiment and Monte Carlo Simulation


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Аннотация

GaAs thermal smoothing at temperatures T ≤ 650°C in the conditions close to equilibrium yields surfaces with atomically smooth terraces separated by steps of monatomic height. At higher temperatures surface smoothing is changed to roughening. Possible reasons of surface roughening at elevated temperatures are studied by means of Monte Carlo simulation and compared with the experimental results on GaAs. It is proved that GaAs roughening at elevated temperatures is caused by kinetic instabilities due to deviations from equilibrium towards growth or sublimation. The microscopic mechanisms of kinetic-driven roughening are discussed.

Авторлар туралы

D. Kazantsev

Rzhanov Institute of Semiconductor Physics; Novosibirsk State University

Email: alper@isp.nsc.ru
Ресей, Novosibirsk, 630090; Novosibirsk, 630090

I. Akhundov

Rzhanov Institute of Semiconductor Physics; Novosibirsk State University

Email: alper@isp.nsc.ru
Ресей, Novosibirsk, 630090; Novosibirsk, 630090

V. Alperovich

Rzhanov Institute of Semiconductor Physics; Novosibirsk State University

Хат алмасуға жауапты Автор.
Email: alper@isp.nsc.ru
Ресей, Novosibirsk, 630090; Novosibirsk, 630090

N. Shwartz

Rzhanov Institute of Semiconductor Physics; Novosibirsk State Technical University

Email: alper@isp.nsc.ru
Ресей, Novosibirsk, 630090; Novosibirsk, 630073

A. Kozhukhov

Rzhanov Institute of Semiconductor Physics

Email: alper@isp.nsc.ru
Ресей, Novosibirsk, 630090

A. Latyshev

Rzhanov Institute of Semiconductor Physics; Novosibirsk State University

Email: alper@isp.nsc.ru
Ресей, Novosibirsk, 630090; Novosibirsk, 630090

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