Thermal Smoothing and Roughening of GaAs Surfaces: Experiment and Monte Carlo Simulation
- Авторлар: Kazantsev D.M.1,2, Akhundov I.O.1,2, Alperovich V.L.1,2, Shwartz N.L.1,3, Kozhukhov A.S.1, Latyshev A.V.1,2
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Мекемелер:
- Rzhanov Institute of Semiconductor Physics
- Novosibirsk State University
- Novosibirsk State Technical University
- Шығарылым: Том 52, № 5 (2018)
- Беттер: 618-621
- Бөлім: XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology
- URL: https://bakhtiniada.ru/1063-7826/article/view/203205
- DOI: https://doi.org/10.1134/S1063782618050147
- ID: 203205
Дәйексөз келтіру
Аннотация
GaAs thermal smoothing at temperatures T ≤ 650°C in the conditions close to equilibrium yields surfaces with atomically smooth terraces separated by steps of monatomic height. At higher temperatures surface smoothing is changed to roughening. Possible reasons of surface roughening at elevated temperatures are studied by means of Monte Carlo simulation and compared with the experimental results on GaAs. It is proved that GaAs roughening at elevated temperatures is caused by kinetic instabilities due to deviations from equilibrium towards growth or sublimation. The microscopic mechanisms of kinetic-driven roughening are discussed.
Авторлар туралы
D. Kazantsev
Rzhanov Institute of Semiconductor Physics; Novosibirsk State University
Email: alper@isp.nsc.ru
Ресей, Novosibirsk, 630090; Novosibirsk, 630090
I. Akhundov
Rzhanov Institute of Semiconductor Physics; Novosibirsk State University
Email: alper@isp.nsc.ru
Ресей, Novosibirsk, 630090; Novosibirsk, 630090
V. Alperovich
Rzhanov Institute of Semiconductor Physics; Novosibirsk State University
Хат алмасуға жауапты Автор.
Email: alper@isp.nsc.ru
Ресей, Novosibirsk, 630090; Novosibirsk, 630090
N. Shwartz
Rzhanov Institute of Semiconductor Physics; Novosibirsk State Technical University
Email: alper@isp.nsc.ru
Ресей, Novosibirsk, 630090; Novosibirsk, 630073
A. Kozhukhov
Rzhanov Institute of Semiconductor Physics
Email: alper@isp.nsc.ru
Ресей, Novosibirsk, 630090
A. Latyshev
Rzhanov Institute of Semiconductor Physics; Novosibirsk State University
Email: alper@isp.nsc.ru
Ресей, Novosibirsk, 630090; Novosibirsk, 630090
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