Surface Nanostructures Forming during the Early Stages of the Metal-Assisted Chemical Etching of Silicon. Optical Properties of Silver Nanoparticles


Дәйексөз келтіру

Толық мәтін

Ашық рұқсат Ашық рұқсат
Рұқсат жабық Рұқсат берілді
Рұқсат жабық Тек жазылушылар үшін

Аннотация

In this two-part work, nanostructures formed in a three-step process of metal-assisted chemical etching of silicon are investigated. In the first part (present publication), the process of the chemical deposition of a layer of self-assembled silver nanoparticles on the surface of a silicon wafer (the first stage of metalassisted chemical etching) is studied. This layer, on the one hand, serves as a catalyst for the subsequent etching of silicon, and, on the other hand, represents a kind of mask for the formation of a certain topology of the emerging Si nanowires. The morphology of the obtained 40- to 60-nm-thick silver nanoparticle layers is investigated by scanning electron microscopy. The spectral dependences of the ellipsometric angles Ψ and Δ are measured using spectroscopic ellipsometry (λ = 250–900nm), and the complex dielectric function of the silver nanolayers is determined from these spectra. The dielectric function features a characteristic plasmon resonance peak in the ultraviolet spectral range. The study of the optical properties of Si nanofilament layers which form during the early stages of metal-assisted chemical etching will be reported as the second part of this work in a separate publication.

Авторлар туралы

Yu. Zharova

Ioffe Institute

Хат алмасуға жауапты Автор.
Email: piliouguina@mail.ioffe.ru
Ресей, St. Petersburg, 194021

V. Tolmachev

Ioffe Institute

Email: piliouguina@mail.ioffe.ru
Ресей, St. Petersburg, 194021

A. Bednaya

Ioffe Institute

Email: piliouguina@mail.ioffe.ru
Ресей, St. Petersburg, 194021

S. Pavlov

Ioffe Institute

Email: piliouguina@mail.ioffe.ru
Ресей, St. Petersburg, 194021

Қосымша файлдар

Қосымша файлдар
Әрекет
1. JATS XML

© Pleiades Publishing, Ltd., 2018