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Effect of the surface on transport phenomena in PbSnTe:In/BaF2 films


Дәйексөз келтіру

Толық мәтін

Ашық рұқсат Ашық рұқсат
Рұқсат жабық Рұқсат берілді
Рұқсат жабық Тек жазылушылар үшін

Аннотация

The effect of the surface on the I–V characteristics of PbSnTe:In film-based structures is investigated in zero magnetic field and in a magnetic field of B ≤ 4 T with different orientations, including in the mode of current limited by space charge. Analysis of the features in the experimental data obtained at different magnetic-field directions and upon layer-by-layer etching of the films shows that the contributions of the free film surface and interface with the substrate to transport phenomena are significantly different and can be caused by a difference in the parameters of localization centers near these surfaces.

Авторлар туралы

A. Akimov

Rzhanov Institute of Semiconductor Physics, Siberian Branch

Email: epov@isp.nsc.ru
Ресей, Novosibirsk, 630090

A. Klimov

Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State Technical University

Email: epov@isp.nsc.ru
Ресей, Novosibirsk, 630090; Novosibirsk, 630073

S. Suprun

Rzhanov Institute of Semiconductor Physics, Siberian Branch

Email: epov@isp.nsc.ru
Ресей, Novosibirsk, 630090

V. Epov

Rzhanov Institute of Semiconductor Physics, Siberian Branch

Хат алмасуға жауапты Автор.
Email: epov@isp.nsc.ru
Ресей, Novosibirsk, 630090

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