Mechanism of microplasma turn-off upon the avalanche breakdown of silicon p–n structures
- Авторлар: Musaev A.M.1
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Мекемелер:
- Amirkhanov Institute of Physics, Dagestan Scientific Center
- Шығарылым: Том 50, № 10 (2016)
- Беттер: 1352-1355
- Бөлім: Physics of Semiconductor Devices
- URL: https://bakhtiniada.ru/1063-7826/article/view/198072
- DOI: https://doi.org/10.1134/S1063782616100171
- ID: 198072
Дәйексөз келтіру
Аннотация
A possible mechanism for natural-microplasma turn-off in silicon p–n junctions is studied. It is shown that the turn-off effect is not a random process, but is based on a certain physical mechanism. The mechanism is associated with the formation of graded-gap regions caused by thermoelastic stresses and electric- field redistribution in the microplasma region.
Авторлар туралы
A. Musaev
Amirkhanov Institute of Physics, Dagestan Scientific Center
Хат алмасуға жауапты Автор.
Email: akhmed-musaev@yandex.ru
Ресей, ul. Yaragskogo 94, Makhachkala, 367003
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