On the thermoelectric properties and band gap of silicon–germanium alloys in the high-temperature region

Аннотация

For n- and p-type Si_0.85Ge_0.15 alloys, the thermoelectric properties (thermopower, resistivity, thermal conductivity, and thermoelectric efficiency) are determined in the range from room temperature to 1200°C. The measurements are carried out with an upgraded device [1] by absolute and steady-state methods with thermal screens. The device is upgraded to extend the working-temperature range to ~1500 K. On the basis of these data, the energy-related capabilities of the alloy are estimated; the thermal band-gap width is calculated in the temperature range of ~1300–1400 K.