Email this article Precision Chemical Etching of GaP(NAs) Epitaxial Layers for the Formation of Monolithic Optoelectronic Devices
- Authors: Kudryashov D.A.1, Gudovskikh A.S.1,2, Baranov A.I.1
-
Affiliations:
- St. Petersburg National Research Academic University, Russian Academy of Sciences
- St. Petersburg Electrotechnical University “LETI”
- Issue: Vol 52, No 13 (2018)
- Pages: 1775-1781
- Section: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://bakhtiniada.ru/1063-7826/article/view/204957
- DOI: https://doi.org/10.1134/S1063782618130092
- ID: 204957
Cite item
Open Access
Access granted
Subscription Access
Abstract
The results of studying the applicability of various etchants for the precision wet etching of structures of monolithic optoelectronic devices containing GaPNAs layers are presented. It is shown that an etchant based on potassium iodide and hydrochloric acid is best suited for this purpose. The presence of nitrogen (up to 4%) and arsenic in the semiconductor composition does not greatly affect the etchant action but requires additional calibration experiments to refine the etching rate in each particular case. Examples of the practical application of precision etching to measure the characteristics of GaPNAs-based solar cells are presented.
About the authors
D. A. Kudryashov
St. Petersburg National Research Academic University, Russian Academy of Sciences
Author for correspondence.
Email: kudryashovda@spbau.ru
Russian Federation, St. Petersburg, 194021
A. S. Gudovskikh
St. Petersburg National Research Academic University, Russian Academy of Sciences; St. Petersburg Electrotechnical University “LETI”
Email: kudryashovda@spbau.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 197376
A. I. Baranov
St. Petersburg National Research Academic University, Russian Academy of Sciences
Email: kudryashovda@spbau.ru
Russian Federation, St. Petersburg, 194021
Supplementary files
