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The Study of Nanoindentation of Atomically Flat GaAs Surface using the Tip of Atomic-Force Microscope
Prasolov N.D., Ermakov I.A., Gutkin A.A., Solov’ev V.A., Dorogin L.M., Konnikov S.G., Brunkov P.N.
JV Characteristic of pn Structure Formed on n-GaAs Surface by Ar+ Ion Beam
Mikoushkin V.M., Kalinovskii V.S., Kontrosh E.V., Makarevskaya E.A.
Simulation and Experimental Studies of Illumination Effects on the Current Transport of Nitridated GaAs Schottky Diode
Rabehi A., Bideux L., Gruzza B., Monier G., Hatem-Kacha A., Guermoui M., Ziane A., Akkal B., Benamara Z., Amrani M., Robert-Goumet C.
Quantitative analysis of optical and recombination losses in Cu(In,Ga)Se2 thin-film solar cells
Kosyachenko L.A., Lytvynenko V.Y., Maslyanchuk O.L.
Femtosecond Laser-Induced Periodical Nanomodification of Surface Composition
Ionin A.A., Kudryashov S.I., Makarov S.V.
The Surface Preparation of Thermoelectric Materials for Deposition of Thin-Film Contact Systems
Shtern M.Y., Karavaev I.S., Shtern Y.I., Kozlov A.O., Rogachev M.S.
Field Effect in PbSnTe:In Films with Low Conductivity in the Mode of Injection from Contacts and Space-Charge Limitation of the Current
Akimov A.N., Klimov A.E., Epov V.S.
Induced surface states of the ultrathin Ba/3C-SiC(111) interface
Benemanskaya G.V., Dementev P.A., Kukushkin S.A., Lapushkin M.N., Senkovskiy B.V., Timoshnev S.N.
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