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Composition and optical properties of amorphous a-SiOx:H films with silicon nanoclusters
Terekhov V.A., Terukov E.I., Undalov Y.K., Parinova E.V., Spirin D.E., Seredin P.V., Minakov D.A., Domashevskaya E.P.
Optical and Structural Properties of Composite Si:Au Layers Formed by Laser Electrodispersion
Ken O.S., Levitskii V.S., Yavsin D.A., Gurevich S.A., Davydov V.Y., Sreseli O.M.
Investigation of the Initial Silicon-on-Sapphire Layer Formed by CVD Techniques
Fedotov S.D., Sokolov E.M., Statsenko V.N., Romashkin A.V., Timoshenkov S.P.
Lifetime of excitons localized in Si nanocrystals in amorphous silicon
Gusev O.B., Belolipetskiy A.V., Yassievich I.N., Kukin A.V., Terukova E.E., Terukov E.I.
Production of Silicon Nanoparticles for Use in Solar Cells
Gribov B.G., Zinov’ev K.V., Kalashnik O.N., Gerasimenko N.N., Smirnov D.I., Sukhanov V.N., Kononov N.N., Dorofeev S.G.
De Haas–van Alphen Oscillations of the Silicon Nanostructure in Weak Magnetic Fields at Room Temperature. Density of States
Romanov V.V., Kozhevnikov V.A., Tracey C.T., Bagraev N.T.
Stimulated Terahertz Emission of Bismuth Donors in Uniaxially Strained Silicon under Optical Intracenter Excitation
Zhukavin R.K., Pavlov S.G., Pohl A., Abrosimov N.V., Riemann H., Redlich B., Hübers H., Shastin V.N.
Transition between Electron Localization and Antilocalization and Manifestation of the Berry Phase in Graphene on a SiC Surface
Agrinskaya N.V., Lebedev A.A., Lebedev S.P., Shakhov M.A., Lahderanta E.
Methods for suppressing optical crosstalk between the cells of a silicon photomultiplier array
Zhukov A.A., Popova E.V., Gerasimenko N.N.
Electronic structure of Pt-substituted clathrate silicides Ba8PtxSi46–x(x = 4–6)
Borshch N.A.
Determination of the Free Charge Carrier Concentration in Boron-Doped Silicon Nanowires Using Attenuated Total Reflection Infrared Spectroscopy
Lipkova E.A., Efimova A.I., Gonchar K.A., Presnov D.E., Eliseev A.A., Lapshin A.N., Timoshenko V.Y.
On the Specific Features of the Plasma-Assisted MBE Synthesis of n+-GaN Layers on GaN/c-Al2O3 Templates
Mizerov A.M., Timoshnev S.N., Nikitina E.V., Sobolev M.S., Shubin K.Y., Berezovskaia T.N., Mokhov D.V., Lundin W.V., Nikolaev A.E., Bouravleuv A.D.
Positive Charge in SOS Heterostructures with Interlayer Silicon Oxide
Popov V.P., Antonov V.A., Vdovin V.I.
Effect of ionic Ag+ transfer on localization of metal-assisted etching of silicon surface
Pyatilova O.V., Sysa A.V., Gavrilov S.A., Yakimova L.V., Pavlov A.A., Belov A.N., Raskin A.A.
Mechanism of Singlet-Oxygen Generation on the Surface of Excited Nanoporous Silicon
Samosvat D.M., Chikalova-Luzina O.P., Zegrya G.G.
Structural and Morphological Properties of Hybrid Heterostructures Based on GaN Grown on a Compliant por-Si(111) Substrate
Seredin P.V., Goloshchapov D.L., Zolotukhin D.S., Lenshin A.S., Mizerov A.M., Arsentyev I.N., Leiste H., Rinke M.
Analysis of the Features of Hot-Carrier Degradation in FinFETs
Makarov A.A., Tyaginov S.E., Kaczer B., Jech M., Chasin A., Grill A., Hellings G., Vexler M.I., Linten D., Grasser T.
Features of carrier tunneling between the silicon valence band and metal in devices based on the Al/high-K oxide/SiO2/Si structure
Vexler M.I., Grekhov I.V.
Influence of the Surface Layer on the Electrochemical Deposition of Metals and Semiconductors into Mesoporous Silicon
Chubenko E.B., Redko S.V., Sherstnyov A.I., Petrovich V.A., Kotov D.A., Bondarenko V.P.
Luminescence Properties of FZ Silicon Irradiated with Swift Heavy Ions
Cherkova S.G., Skuratov V.A., Volodin V.A.
Effect of Thermal Annealing on the Photovoltaic Properties of GaP/Si Heterostructures Fabricated by Plasma-Enhanced Atomic Layer Deposition
Uvarov A.V., Zelentsov K.S., Gudovskikh A.S.
Effect of the Temporal Characteristics of Modulated DC Plasma with the (SiH4–Ar–O2) Gas Phase on ncl-Si Growth in an a-SiOx:H matrix (\({{C}_{{{{{\text{O}}}_{{\text{2}}}}}}}\) = 15.5 mol %)
Undalov Y.K., Terukov E.I., Trapeznikova I.N.
Epitaxially Grown Monoisotopic Si, Ge, and Si1–xGex Alloy Layers: Production and Some Properties
Detochenko A.P., Denisov S.A., Drozdov M.N., Mashin A.I., Gavva V.A., Bulanov A.D., Nezhdanov A.V., Ezhevskii A.A., Stepikhova M.V., Chalkov V.Y., Trushin V.N., Shengurov D.V., Shengurov V.G., Abrosimov N.V., Riemann H.
Influence of the Metallization Composition and Annealing Process Parameters on the Resistance of Ohmic Contacts to n-type 6H-SiC
Egorkin V.I., Zemlyakov V.E., Nezhentsev A.V., Gudkov V.A., Garmash V.I.
Impact of High-Energy Electron Irradiation on Surge Currents in 4H-SiC JBS Schottky Diodes
Lebedev A.A., Kozlovski V.V., Ivanov P.A., Levinshtein M.E., Zubov A.V.
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