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Semiconductors
ISSN 1063-7826 (Print) ISSN 1090-6479 (Online)
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
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M

Mikhlin, Yu. L.
Mikhrin, S.
Miki, H.
Mikitchuk, A. P.
Mikoushkin, V. M.
Milakhin, D. S.
Milchanin, O. V.
Milinovic, Dunja
Milonakou-Koufoudaki, K.
Minailova, I. A.
Minakov, D. A.
Minkov, G. M.
Mintairov, A. M.
Mintairov, M. A.
Mintairov, S. A.
Mironova, M. S.
Miroshnikov, B. N.
Miroshnikov, I. V.
Miroshnikova, I. N.
Mishchenko, A.
Mishin, A. V.
Mishina, E. D.
Mishkin, V. P.
Mishustin, V. G.
Mitin, D. M.

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