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Semiconductors
ISSN 1063-7826 (Print) ISSN 1090-6479 (Online)
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
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V

Vorobiev, L. E.
Vorobjev, L. E.
Vorobyeva, E. A.
Vorobyov, Yu. V.
Voronenkov, V. V.
Voronin, A. I.
Voronin, P. G.
Voronin, V. I.
Voronkov, V. B.
Voronov, B. M.
Voronov, M. M.
Vorontsov-Velyaminov, P. N.
Voropaev, K. O.
Vorotyntsev, V. M.
Vostokov, N. V.
Vostretsova, L. N.
Vovk, I. A.
Vovkotrub, E. G.
Voznesenskiy, S. S.
Voznyuk, G. V.
Vrubel, I. I.
Vuuren, A. Janse
Vygranenko, Yu.
Vyrko, S. A.
Vysotskii, N. V.

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