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Semiconductors
ISSN 1063-7826 (Print) ISSN 1090-6479 (Online)
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
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P

Perekhrest, A. L.
Perevalov, A. A.
Pereverzev, Ya. E.
Perevoshchikov, D. A.
Pergament, A. L.
Permiakov, N. V.
Perros, A.
Pershukevich, P. P.
Pescherova, S. M.
Peshcherova, S. M.
Peskov, N. Yu.
Petlitskaya, T. V.
Petrakov, D. S.
Petrenko, A. V.
Petrenko, N. Yu.
Petrosyan, L. S.
Petrosyan, P. G.
Petrosyan, S. I.
Petrov, A. A.
Petrov, P. V.
Petrov, S. I.
Petrov, V. N.
Petrova, L. I.
Petrova, Yu. S.
Petrovic, S.

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