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Semiconductors
ISSN 1063-7826 (Print) ISSN 1090-6479 (Online)
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
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V

Vasiliev, A. A.
Vasiliev, R. B.
Vasiliev, V. K.
Vasilyev, A. P.
Vasilyev, S. V.
Vasilyev, V. V.
Vasilyev, Yu. B.
Vasilyeva, G. Yu.
Vasnev, V. A.
Vasyutin, M. A.
Vavilova, L. S.
Vdovichev, S. N.
Vdovin, E. E.
Vdovin, G. K.
Vdovin, V. I.
Ved’, M. V.
Vedeneev, A. S.
Veinger, A. I.
Veis, A. N.
Velikovskiy, L. E.
Venediktov, M. M.
Verbin, S. Y.
Verbitskii, V. N.
Verbitskiy, V. N.
Verbus, V. A.

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