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Semiconductors
ISSN 1063-7826 (Print) ISSN 1090-6479 (Online)
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
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S

Solonitsyna, A. P.
Solov’ev, S. M.
Solov’ev, V. A.
Solovan, M. M.
Solovev, A. A.
Soloviev, S. M.
Soltanovich, O. A.
Solyanikova, K. A.
Somov, A. I.
Sopinskii, N. V.
Sorokin, A. I.
Sorokin, S. A.
Sorokina, S. V.
Soshnikov, I. P.
Souifi, A.
Sovtus, N. V.
Spesivtsev, E. V.
Spirin, D. E.
Spirin, K. E.
Spirina, A. A.
Spitzer, F.
Sreseli, O. M.
Srivastava, Anurag
Stachowiak, P.
Stadnyk, Yu. V.

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