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Semiconductors
ISSN 1063-7826 (Print) ISSN 1090-6479 (Online)
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
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Z

Zabavichev, I. Yu.
Zabegaev, D. N.
Zablotsky, S. V.
Zabolotnykh, A. A.
Zabotnov, S. V.
Zabrodski, V. V.
Zabrodskii, A. G.
Zabrodskii, V. V.
Zabrodskiy, V. V.
Zadiranov, Yu. M.
Zagorodnev, I. V.
Zainabidinov, S.
Zaitsev, A. A.
Zaitsev, S. V.
Zaitsev, V. K.
Zaitseva, E. G.
Zaitseva, N. V.
Zakgeim, A. L.
Zakhar’in, A. O.
Zakharov, L. Yu.
Zakharova, I. B.
Zakharova, N. V.
Zakheim, D. A.
Zakirova, R. M.
Zalessky, V. G.

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