| Шығарылым |
Бөлім |
Атауы |
Файл |
| Том 50, № 7 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Terahertz emission from CdHgTe/HgTe quantum wells with an inverted band structure |
|
| Том 51, № 5 (2017) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Injection-induced terahertz electroluminescence from silicon p–n structures |
|
| Том 52, № 8 (2018) |
Physics of Semiconductor Devices |
On the Fabrication of Graphene p–n Junctions and Their Application for Detecting Terahertz Radiation |
|
| Том 53, № 7 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Magnetotransport Spectroscopy of the Interface, Quantum Well, and Hybrid States in Structures with 16-nm-Thick Multiple HgTe Layers |
|
| Том 53, № 12 (2019) |
Carbon Systems |
Edge Doping in Graphene Devices on SiO2 Substrates |
|
