作者的详细信息
Balakshin, Yu. V.
| 期 | 栏目 | 标题 | 文件 |
| 卷 51, 编号 6 (2017) | Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) | Study of the distribution profile of iron ions implanted into silicon | |
| 卷 53, 编号 6 (2019) | Surfaces, Interfaces, and Thin Films | Features of Defect Formation in Nanostructured Silicon under Ion Irradiation | |
| 卷 53, 编号 8 (2019) | Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) | Influence of the Charge State of Xenon Ions on the Depth Distribution Profile Upon Implantation into Silicon | |
| 卷 53, 编号 12 (2019) | Carbon Systems | Modification of Carbon-Nanotube Wettability by Ion Irradiation |