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Semiconductors
ISSN 1063-7826 (Print) ISSN 1090-6479 (Online)
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
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Author Details

Kukushkin, V. A.

Issue Section Title File
Vol 50, No 11 (2016) XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 Nanoheterostructures with improved parameters for high-speed and efficient plasmon-polariton light emitting Schottky diodes
Vol 53, No 3 (2019) Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena MOS-Hydride Epitaxy Growth of InGaAs/GaAs Submonolayer Quantum Dots for the Excitation of Surface Plasmon–Polaritons
Vol 53, No 10 (2019) Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 On the Asymmetric Generation of a Superradiant Laser with a Symmetric Low-Q Cavity
Vol 53, No 10 (2019) Carbon Systems Sharp Drop in the Mobility of Holes with a Decrease in Their Two-Dimensional Concentration by an External Voltage in Boron δ-Doped Diamond Layers
 

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