| Шығарылым |
Бөлім |
Атауы |
Файл |
| Том 50, № 4 (2016) |
Fabrication, Treatment, and Testing of Materials and Structures |
On a reduction in cracking upon the growth of AlN on Si substrates by hydride vapor-phase epitaxy |
|
| Том 50, № 5 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Optical properties of metamorphic GaAs/InAlGaAs/InGaAs heterostructures with InAs/InGaAs quantum wells, emitting light in the 1250–1400-nm spectral range |
|
| Том 50, № 7 (2016) |
Fabrication, Treatment, and Testing of Materials and Structures |
Chloride epitaxy of β-Ga2O3 layers grown on c-sapphire substrates |
|
| Том 52, № 2 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Intraband Radiation Absorption by Holes in InAsSb/AlSb and InGaAsP/InP Quantum Wells |
|
