作者的详细信息
Strelchenko, S. S.
| 期 | 栏目 | 标题 | 文件 |
| 卷 51, 编号 11 (2017) | XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 | Capacitance spectroscopy of hole traps in high-resistance gallium-arsenide structures grown by liquid-phase epitaxy | |
| 卷 53, 编号 10 (2019) | Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 | Vertical Field-Effect Transistor with a Controlling GaAs-Based p–n Junction |