作者的详细信息
Danilov, S. N.
| 期 | 栏目 | 标题 | 文件 |
| 卷 52, 编号 8 (2018) | Physics of Semiconductor Devices | On the Fabrication of Graphene p–n Junctions and Their Application for Detecting Terahertz Radiation | |
| 卷 53, 编号 1 (2019) | Surfaces, Interfaces, and Thin Films | Photoelectromagnetic Effect Induced by Terahertz Radiation in (Bi1 –xSbx)2Te3 Topological Insulators |