Автор туралы ақпарат
Lin, Pao-Sheng
| Шығарылым | Бөлім | Атауы | Файл |
| Том 53, № 3 (2019) | Fabrication, Treatment, and Testing of Materials and Structures | Comparative Studies of AlGaAs/InGaAs Enhancement/Depletion-Mode High Electron Mobility Transistors with Virtual Channel Layers by Hybrid Gate Recesses Approaches |