作者的详细信息

Folomin, P. I.

期 栏目 标题 文件
卷 50, 编号 11 (2016) XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 Epitaxial GaN layers formed on langasite substrates by the plasma-assisted MBE method